CPC H01J 37/32944 (2013.01) [H01J 37/34 (2013.01); H01J 2237/332 (2013.01)] | 21 Claims |
1. A method of plasma processing a substrate in a plasma chamber, the method comprising:
supplying a power supply signal to electrodes arranged within the plasma chamber in order to form a plasma in the plasma chamber;
monitoring at least one parameter related to the plasma processing;
determining a feature related to the at least one monitored parameter; and
adjusting the power supply signal during the plasma processing to modify the feature,
wherein the modification of the feature eliminates or mitigates formation of crazing on the substrate.
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16. A plasma processing system comprising:
a plasma chamber,
at least one electrode located inside the plasma chamber,
at least one power supply configured to supply a power supply signal to the at least one electrode in order to form a plasma in the plasma chamber,
at least one sensor for measuring at least one plasma process parameter related to a plasma processing of a substrate inside the plasma chamber,
at least one determination unit configured to determine a feature related to the at least one plasma process parameter of the plasma processing, and
a control unit for controlling the power supply in response to the feature, wherein the control unit is configured to adjust the power supply signal during the plasma processing such that the feature is modified so as to eliminate or mitigate formation of crazing on the substrate.
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