US 12,148,595 B2
Plasma uniformity control in pulsed DC plasma chamber
Linying Cui, Cupertino, CA (US); and James Rogers, Los Gatos, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 29, 2021, as Appl. No. 17/537,328.
Claims priority of provisional application 63/208,913, filed on Jun. 9, 2021.
Prior Publication US 2022/0399184 A1, Dec. 15, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32128 (2013.01) [H01J 37/32091 (2013.01); H01J 37/32146 (2013.01); H01J 37/32183 (2013.01); H01J 37/3244 (2013.01); H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01J 37/32724 (2013.01); H01J 37/32862 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A processing method, comprising:
(i) generating, by use of a radio frequency (RF) signal from an RF generator, a plasma of gases or vapors delivered to a processing region defined by a chamber lid and a substrate support assembly, the substrate support assembly comprising:
a support base that is electrically coupled to the RF generator;
a first electrode that is disposed over the support base and is spaced apart from the support base by a first portion of dielectric material, wherein the RF signal establishes a first RF waveform at the first electrode;
a second portion of dielectric material disposed over the first electrode, the second portion of dielectric material forming a substrate supporting surface; and
a second electrode that is disposed a distance from a center of the first electrode, is spaced apart from the support base by a third portion of dielectric material, and is electrically coupled to an edge tuning circuit; and
(ii) establishing, by use of the RF signal and the tuning circuit, a second RF waveform at the second electrode, wherein one or more characteristics of the first RF waveform are different from characteristics of the second RF waveform.