US 12,148,593 B2
Ion beam device
Shinichi Matsubara, Tokyo (JP); and Masami Ikota, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 17/635,836
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Sep. 17, 2019, PCT No. PCT/JP2019/036260
§ 371(c)(1), (2) Date Feb. 16, 2022,
PCT Pub. No. WO2021/053704, PCT Pub. Date Mar. 25, 2021.
Prior Publication US 2022/0301812 A1, Sep. 22, 2022
Int. Cl. H01J 37/22 (2006.01); H01J 37/244 (2006.01); H01J 37/28 (2006.01); H01J 37/305 (2006.01); H01J 37/31 (2006.01)
CPC H01J 37/222 (2013.01) [H01J 37/244 (2013.01); H01J 37/28 (2013.01); H01J 37/31 (2013.01); H01J 2237/0216 (2013.01); H01J 2237/2448 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/30466 (2013.01); H01J 2237/31749 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An ion beam device configured to irradiate a sample with an ion beam to observe or process the sample, the ion beam device comprising:
an emitter tip having a needle-shaped end;
an extraction electrode arranged to face the emitter tip and having an opening at a position away from the emitter tip;
a gas supply source configured to supply a gas to the vicinity of the emitter tip;
a voltage source configured to apply a voltage between the emitter tip and the extraction electrode, thereby irradiating the sample with an ion beam from the emitter tip;
a detector configured to detect a secondary electron or a secondary ion emitted from the sample by irradiating the sample with the second ion beam, and
a computer configured to detect a charged particle generated from the sample by irradiating the sample with the ion beam, thereby generating an observation image of the sample, wherein
the gas supply source is configured to supply a gas that contains a first element having a first mass number and a second element having a second mass number larger than the first mass number,
the voltage source is configured to perform a first mode of applying a first voltage to irradiate the sample with a first ion beam generated by ionizing the first element from the emitter tip, and a second mode of processing the sample in a thickness direction by applying a second voltage to irradiate the sample with a second ion beam generated by ionizing the second element from the emitter tip,
the computer is configured to obtain a first observation image of a first shape formed in a first region of the sample,
the voltage source is configured to perform the second mode when the emitter tip irradiates a second region of the sample with an ion beam after the computer obtains the first observation image, thereby forming a first hole reaching a first depth inside the sample in a second region,
the voltage source is configured to perform the first mode on the second region after the first hole is formed,
the computer is configured to obtain a second observation image of a second shape formed in the second region after the first hole is formed by the voltage source performing the first mode on the second region,
the computer is configured to compare the first observation image and the second observation image, thereby obtaining a relative positional relation between the first shape and the second shape,
the computer is configured to compare a first signal pattern of the secondary electron or the secondary ion detected by the detector and a second signal pattern of the secondary electron or secondary ion emitted from a known structure in the sample,
the second signal pattern comprising a plurality of N peaks, each peak corresponding to a different conductor layer of a plurality of N layers of the sample, and
the computer is configured to terminate the second mode when the first signal pattern and the second signal pattern match a predetermined termination condition indicating a depth reaching the Nth layer of the sample.