US 12,148,484 B2
Memory sub-system scan
Vamsi Pavan Rayaprolu, San Jose, CA (US); Karl D. Schuh, Santa Cruz, CA (US); Jeffrey S. McNeil, Jr., Nampa, ID (US); Kishore K Muchherla, Fremont, CA (US); Ashutosh Malshe, Fremont, CA (US); and Jiangang Wu, Milpitas, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 22, 2022, as Appl. No. 17/992,035.
Application 17/992,035 is a division of application No. 17/001,769, filed on Aug. 25, 2020, granted, now 11,527,294.
Prior Publication US 2023/0085178 A1, Mar. 16, 2023
Int. Cl. G11C 16/34 (2006.01); G06F 12/02 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 29/10 (2006.01)
CPC G11C 16/3418 (2013.01) [G06F 12/0253 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 29/10 (2013.01); G06F 2212/7211 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A system, comprising:
a memory device comprising:
a first group of memory cells located in a first memory die; and
a second group of memory cells located in a second memory die; and
a processing device coupled to the memory device, wherein the processing device is configured to:
perform, to determine a reliability of the first group and at a first rate, a scan operation on the first group of memory cells located in the first memory die; and
perform, to determine a reliability of the second group and at a second rate, a scan operation on the second group of memory cells located in the second memory die, which is indicated by a manufacturer of the second memory die as having a reliability characteristic lower than the first die, wherein:
the scan operations are performed on the first and second groups of memory cells at respective rates determined based on whether the first memory die or the second memory die is indicated as having a reliability characteristic lower than another memory die; and
the second rate is higher than the first rate.