US 12,147,706 B2
Storage device controlled by temperature dependent operation commands
Kyungduk Lee, Seongnam-si (KR); and Younsoo Cheon, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 14, 2022, as Appl. No. 17/932,073.
Claims priority of application No. 10-2021-0172043 (KR), filed on Dec. 3, 2021; and application No. 10-2022-0042010 (KR), filed on Apr. 5, 2022.
Prior Publication US 2023/0176788 A1, Jun. 8, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0607 (2013.01); G06F 3/0658 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a plurality of nonvolatile memories each including an internal temperature sensor;
a memory controller configured to communicate with the plurality of nonvolatile memories through a first interface and having a plurality of operation commands defined for temperature ranges of the nonvolatile memories, respectively; and
an external temperature sensor configured to communicate with the memory controller via a second interface,
wherein the memory controller is configured to obtain an external temperature value from the external temperature sensor periodically at a first frequency and obtain an internal temperature value based on at least the internal temperature sensor of a target nonvolatile memory of the plurality of nonvolatile memories periodically at a second frequency different from the first frequency,
wherein the memory controller is configured to determine a temperature range of the target nonvolatile memory based on the external temperature value when a difference between the external temperature value and the internal temperature value is equal to or less than a first threshold value,
wherein the memory controller is configured to determine the temperature range based on the internal temperature value when the difference exceeds the first threshold value, and
wherein the memory controller is configured to provide an operation command corresponding to the temperature range from among the plurality of operation commands to the target nonvolatile memory.