US 12,147,666 B2
Non-volatile memory device including multi-stack memory block and operating method thereof
Yohan Lee, Suwon-si (KR); Jaeduk Yu, Suwon-si (KR); and Jiho Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 3, 2022, as Appl. No. 18/052,428.
Claims priority of application No. 10-2021-0154260 (KR), filed on Nov. 10, 2021; and application No. 10-2022-0039874 (KR), filed on Mar. 30, 2022.
Prior Publication US 2023/0146041 A1, May 11, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0607 (2013.01) [G06F 3/064 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a memory system comprising a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control of the memory controller, and the non-volatile memory device comprising a first memory block and a second memory block, the method comprising:
determining, by the memory controller, whether the first memory block satisfies a block reset condition;
in response to the first memory block satisfying the block reset condition, applying a turn-on voltage to word lines of dummy cells included in the first memory block;
transferring data pre-programmed in the first memory block to the second memory block;
erasing the first memory block; and
re-programming the dummy cells of the first memory block.