US 12,147,154 B2
EUV photo masks and manufacturing method thereof
Hsin-Chang Lee, Zhubei (TW); Chia-Jen Chen, Jhudong Township (TW); Pei-Cheng Hsu, Taipei (TW); and Ta-Cheng Lien, Cyonglin Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 3, 2023, as Appl. No. 18/130,262.
Application 18/130,262 is a continuation of application No. 17/090,825, filed on Nov. 5, 2020, granted, now 11,619,875, issued on Apr. 4, 2023.
Claims priority of provisional application 63/045,444, filed on Jun. 29, 2020.
Prior Publication US 2023/0251563 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01); G03F 1/54 (2012.01)
CPC G03F 1/24 (2013.01) [G03F 1/54 (2013.01)] 20 Claims
 
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an absorber layer disposed over the capping layer; and
a Cr oxide layer disposed on the absorber layer,
wherein the absorber layer includes a CrN layer, a CrON layer having a nitrogen concentration of 10 atomic % to 30 atomic % or a CrCON layer having a nitrogen concentration of 10 atomic % to 30 atomic %.