US 12,147,117 B2
Light-emitting device including polarized light control member
Takuya Kadowaki, Yokohama (JP); Tadashi Kawazoe, Atsugi (JP); and Masaki Sugeta, Yokohama (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Apr. 9, 2024, as Appl. No. 18/630,831.
Application 18/630,831 is a continuation of application No. 17/898,081, filed on Aug. 29, 2022, granted, now 11,982,902.
Claims priority of application No. 2021-141810 (JP), filed on Aug. 31, 2021.
Prior Publication US 2024/0255800 A1, Aug. 1, 2024
Int. Cl. G02F 1/13357 (2006.01); H01L 25/075 (2006.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01)
CPC G02F 1/133603 (2013.01) [H01L 25/0753 (2013.01); H01L 33/504 (2013.01); H01L 33/58 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
at least one light-emitting element comprising a semiconductor layered portion and configured to emit light that has a predetermined wavelength and includes a first polarization component and a second polarization component; and
at least one polarized light control member in contact with the at least one light-emitting element; wherein:
the at least one polarized light control member comprises a first structure and a second structure that are positioned in order from a light-emitting element side;
the first structure is configured to receive the light having the predetermined wavelength to generate near-field light;
the second structure is configured to receive the near-field light and the light having the predetermined wavelength to emit light in which a proportion of the second polarization component is greater than a proportion of the first polarization component; and
the predetermined wavelength is in a range from a wavelength on a short side to a wavelength on a long side of a wavelength having an intensity that is half an intensity of a peak wavelength of light emitted from the at least one light-emitting element.