| CPC G02F 1/025 (2013.01) [G02F 2201/58 (2013.01)] | 9 Claims |
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1. A photonic device comprising:
a PIN junction comprising a p-doped region, an intrinsic silicon bulk waveguide and an n-doped region;
two metal layers connected to the p-doped region and the n-doped region;
a measurement device connected between the two metal layers for measuring, non-invasively and with energy waste reduced, a value of an electric parameter between the two metal layers, said electric parameter indicative of an amount of light propagating through the waveguide; and
a voltage source connected between the two metal layers and configured to apply a voltage between the two metal layers and thereby change a refraction index of the waveguide and non-invasively affect a phase of light propagating through the waveguide, wherein the voltage to be applied between the two metal layers is determined in accordance with the value of the electric parameter measured by the measurement device,
wherein the photonic device is installed in a photonic system or subsystem comprising a plurality of instances of the photonic device, the system calibrated in accordance with a calibration model, wherein the calibration model is generated by:
obtaining indications of control parameters affecting a performance of each instance of the plurality of photonic devices;
obtaining a plurality of value sets, each set of the value sets comprising values of control parameters to be applied to a respective one of the plurality of instances;
obtaining respective voltage values to be applied to each of the plurality of instances, and applying the respective voltages;
measuring values indicative of the amount of light propagating through the waveguide of each of the plurality of devices in response to the respective applied voltage,
determining the calibration model of the system, based at least on the control parameters, applied voltage values and the measured values; and
storing the calibration model;
wherein the calibration model is configured to be applied by measuring values of the output parameters of the plurality of devices and applying the values of the control parameters to the plurality of devices in a non-invasive manner, and
wherein the voltage to be applied between the two metal layers to change the refraction index is determined in accordance with the value measured by the measurement device indicative of the amount of light as measured and with the calibration model.
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