US 12,146,853 B2
Methods and apparatus including array of reaction chambers over array of chemFET sensors for measuring analytes
James Bustillo, Castro Valley, CA (US); Mark J. Milgrew, Branford, CT (US); Wolfgang Hinz, Killingworth, CT (US); John Leamon, Stonington, CT (US); John Davidson, Guilford, CT (US); Martin Huber, Carlsbad, CA (US); Antoine M. van Oijen, Needham, MA (US); and Jonathan Rothberg, Guilford, CT (US)
Assigned to Life Technologies Corporation, Carlsbad, CA (US)
Filed by LIFE TECHNOLOGIES CORPORATION, Carlsbad, CA (US)
Filed on Dec. 11, 2023, as Appl. No. 18/536,131.
Application 18/536,131 is a continuation of application No. 17/823,696, filed on Aug. 31, 2022, granted, now 11,874,250.
Application 17/823,696 is a continuation of application No. 16/101,337, filed on Aug. 10, 2018, granted, now 11,448,613, issued on Sep. 20, 2022.
Application 16/101,337 is a continuation of application No. 13/797,871, filed on Mar. 12, 2013, abandoned.
Application 13/797,871 is a continuation of application No. 13/612,742, filed on Sep. 12, 2012, abandoned.
Application 13/612,742 is a continuation of application No. 12/474,897, filed on May 29, 2009, abandoned.
Claims priority of provisional application 61/205,626, filed on Jan. 22, 2009.
Claims priority of provisional application 61/198,222, filed on Nov. 4, 2008.
Claims priority of provisional application 61/196,953, filed on Oct. 22, 2008.
Prior Publication US 2024/0201126 A1, Jun. 20, 2024
Int. Cl. G01N 27/414 (2006.01); C12Q 1/6869 (2018.01); C12Q 1/6874 (2018.01); H01L 21/82 (2006.01)
CPC G01N 27/4145 (2013.01) [C12Q 1/6869 (2013.01); C12Q 1/6874 (2013.01); G01N 27/4148 (2013.01); H01L 21/82 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
forming an array of chemically-sensitive field effect transistor (chemFET) sensors, each chemFET sensor in the array of chemFET sensors having a floating gate structure including a sensing surface formed on a top metal layer of the floating gate structure;
depositing a dielectric layer over the array of chemFET sensors;
etching the dielectric layer to define an array of reaction chambers; each reaction chamber in the array of reaction chambers exposing a corresponding sensing surface of a floating gate structure; and
depositing a sensing material within the array of reaction chambers and at least partially on each reaction chamber sidewall, wherein each reaction chamber in the array of reaction chambers includes a sensing layer comprising the sensing material in contact with the sensing surface of a floating gate structure.