US 12,146,076 B2
Semiconductor element
Jae-Wan Park, Seongnam-si (KR); Jung-Hun Lim, Seongnam-si (KR); and Jin-Uk Lee, Seongnam-si (KR)
Filed by SOULBRAIN CO., LTD., Seongnam-si (KR)
Filed on Nov. 6, 2020, as Appl. No. 17/090,909.
Application 17/090,909 is a continuation of application No. 16/228,780, filed on Dec. 21, 2018, granted, now 11,912,902.
Application 16/228,780 is a continuation of application No. PCT/KR2017/015497, filed on Dec. 26, 2017.
Claims priority of application No. 10-2016-0178754 (KR), filed on Dec. 26, 2016; application No. 10-2016-0178757 (KR), filed on Dec. 26, 2016; application No. 10-2017-0178590 (KR), filed on Dec. 22, 2017; and application No. 10-2017-0178591 (KR), filed on Dec. 22, 2017.
Prior Publication US 2021/0079266 A1, Mar. 18, 2021
Int. Cl. H01L 21/02 (2006.01); C09G 1/04 (2006.01); G09G 1/04 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 21/762 (2006.01)
CPC C09G 1/04 (2013.01) [H01L 21/02458 (2013.01); H01L 21/31056 (2013.01); H01L 21/31111 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 21/76224 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor element comprising:
a cell gate structure formed on a substrate on which a plurality of interlayer insulating layers and a plurality of gate electrode layers are alternatively stacked, wherein the cell gate structure formed by selectively etching a plurality of nitride layers by a composition for the selective etching,
wherein the composition for etching comprises:
a first inorganic acid,
a first additive represented by Chemical Formula 1,
a second additive comprising a silane inorganic acid salt produced by reaction between a nitric acid and a second silane compound; and
a solvent,
wherein:
the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination,
the silane inorganic acid salt is represented by Chemical Formula C260-1,
wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 998 by weight, the second additive at a proportion of 0.01% to 15% by weight, and the solvent as the balance,

OG Complex Work Unit Chemistry
(In Chemical Formula 1, X is O or N, R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group, and nu is 0 or 1,)

OG Complex Work Unit Chemistry
(In Chemical Formula 10 and Chemical Formula 20, each R1 to R10 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R1 to R4 is hydrogen, or an alkoxy group having 1 to 10 carbon atoms, and n is one of integer numbers from 1 to 10,)

OG Complex Work Unit Chemistry
(In Chemical Formula C260-1, each R111 to R112 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, each R113 to R114 is independently hydrogen, n4 is one of integer numbers from 0 to 2, l1 is one of integer numbers from 0 to 10, m1 is 0 or 1).