US 12,145,851 B2
Method of obtaining a silicon carbide-graphene composite with a controlled surface morphology
Piotr Ciochon, Cracow (PL); and Jacek Kolodziej, Cracow (PL)
Assigned to UNIWERSYTET JAGIELLONSKI, Cracow (PL)
Appl. No. 17/640,397
Filed by UNIWERSYTET JAGIELLONSKI, Cracow (PL)
PCT Filed Sep. 23, 2020, PCT No. PCT/PL2020/050068
§ 371(c)(1), (2) Date Mar. 4, 2022,
PCT Pub. No. WO2021/060999, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 431248 (PL), filed on Sep. 23, 2019.
Prior Publication US 2022/0371900 A1, Nov. 24, 2022
Int. Cl. C23C 14/22 (2006.01); C01B 32/956 (2017.01); C01B 32/984 (2017.01)
CPC C01B 32/956 (2017.08) [C01B 32/984 (2017.08)] 7 Claims
 
1. A method of obtaining a silicon carbide (SiC) graphene surface composite with a controlled surface morphology, comprising the steps of:
(a) providing a silicon carbide (SiC) substrate,
(b) annealing the SiC substrate at a temperature of 1573 K to 2090 K, at a pressure of not more than 5×10−7 mbar, in a first beam of silicon atoms from an external source of silicon atoms,
(c) cooling,
wherein in step (c) the SiC substrate from step b) is cooled at a rate of 0.23 K/s to 1.43 K/s, in a second beam of silicon atoms from the external source of silicon atoms, to obtain a surface covered with terraces, or cooled at a rate of >100 K/s in a third beam of silicon atoms from the external source of silicon atoms, to obtain a surface covered with a network of pits.