| CPC C01B 17/20 (2013.01) [C01B 17/22 (2013.01); C01F 17/288 (2020.01); C01G 3/12 (2013.01); C01G 15/00 (2013.01); C01G 17/00 (2013.01); C01G 25/00 (2013.01); H01M 10/0562 (2013.01); C01P 2002/02 (2013.01); C01P 2006/40 (2013.01); H01M 10/0525 (2013.01); H01M 2300/0068 (2013.01)] | 6 Claims |

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1. A method of preparing an amorphous sulfide exhibiting ionic conductivity, the method comprising:
preparing a metal or an alloy comprising the metal;
gas-phase supplying a sulfur source to a surface of the metal or the alloy; and
controlling a reaction rate by adjusting a reaction temperature between the sulfur source and the metal or the alloy in a range of about 20° C. to 300° C. and by adjusting a flow rate of the gas-phase supplying of the sulfur source to the surface of the metal or the alloy to control an interfacial distance between sulfur atoms of the sulfur source and atoms of the metal or the alloy, such that a density of the amorphous sulfide is adjusted,
wherein, as the reaction rate increases, the density of the amorphous sulfide decreases.
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