US 12,477,955 B2
Magnetoresistive stack and methods therefor
Renu Whig, Chandler, AZ (US); Sumio Ikegawa, Phoenix, AZ (US); Jon Slaughter, Slingerlands, NY (US); Michael Tran, San Jose, CA (US); Jacob Wang Chenchen, Singapore (SG); and Ganesh Kolliyil Rajan, Singapore (SG)
Assigned to Everspin Technologies, Inc., Chandler, AZ (US)
Appl. No. 17/263,434
Filed by Everspin Technologies, Inc., Chandler, AZ (US)
PCT Filed Jul. 29, 2019, PCT No. PCT/US2019/043914
§ 371(c)(1), (2) Date Jan. 26, 2021,
PCT Pub. No. WO2020/028250, PCT Pub. Date Feb. 6, 2020.
Claims priority of provisional application 62/711,918, filed on Jul. 30, 2018.
Prior Publication US 2021/0288245 A1, Sep. 16, 2021
Int. Cl. H10N 50/85 (2023.01); H01F 10/32 (2006.01); H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01)
CPC H10N 50/85 (2023.02) [H01F 10/3259 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H10N 50/01 (2023.02); H01F 10/329 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A magnetoresistive device, comprising:
a tunnel barrier region;
a magnetically fixed region positioned on one side of the tunnel barrier region, wherein the magnetically fixed region includes a synthetic antiferromagnetic (SAF) structure;
a magnetically free region positioned on an opposite side of the tunnel barrier region;
one or more transition regions positioned between the magnetically fixed region and the tunnel barrier region, wherein the one or more transition regions include at least a first transition region and second transition region, wherein the first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron, and wherein the first transition region is positioned between the second transition region and the tunnel barrier region; and
a reference region positioned between the one or more transition regions and the B tunnel barrier region and making an interface with the tunnel barrier region,
wherein the first transition region is positioned between the reference region and the second transition region.