US 12,477,951 B2
Method for manufacturing a spintronic device comprising a thick active magnetic layer
Bernard Dieny, Grenoble (FR); and Ioan-Lucian Prejbeanu, Grenoble (FR)
Assigned to COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), (FR)
Appl. No. 17/416,337
Filed by COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris (FR)
PCT Filed Dec. 20, 2019, PCT No. PCT/EP2019/086677
§ 371(c)(1), (2) Date Jun. 18, 2021,
PCT Pub. No. WO2020/127970, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 1873730 (FR), filed on Dec. 21, 2018.
Prior Publication US 2022/0085285 A1, Mar. 17, 2022
Int. Cl. H01L 43/12 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H10B 61/00 (2023.02); H10N 50/80 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method for manufacturing a spintronic device comprising at least a non-magnetic spacer, a reference layer and a storage layer comprising at least one magnetic pillar, the method comprising:
depositing at least one sacrificial layer of a total thickness at least equal to a targeted thickness of the at least one magnetic pillar to be formed on a substrate comprising at least one conductive zone having a top surface that is level with a surface of the substrate;
forming at least one flared cavity, traversing said at least one sacrificial layer, a lowermost portion of the at least one flared cavity facing a surface of a corresponding one of the at least one conductive zone of the substrate;
depositing at least one magnetic layer in a respective one of said at least one flared cavity, of a thickness equal to or greater than the targeted thickness of the at least one magnetic pillar;
eliminating an excess of the at least one magnetic layer outside of the at least one flared cavity and planarizing a surface of said at least one magnetic layer to reach the targeted thickness of the at least one magnetic pillar;
removing at least a part of the at least one sacrificial layer in order to form, from a remainder of the at least one magnetic layer, the at least one magnetic pillar forming all or part of the storage layer of said spintronic device;
depositing at least the non-magnetic spacer and the reference layer such that the at least one magnetic pillar is surmounted by at least said non-magnetic spacer and said reference layer;
filling spaces adjacent the at least one magnetic pillar with a dielectric filling material;
carrying out a polishing to eliminate an excess of the dielectric filling material deposited at the preceding step in order to have access to an upper surface of an element surmounting the at least one magnetic pillar; and
forming an electrical contact on a surface of the element surmounting the at least one magnetic pillar.