US 12,477,922 B2
Light-emitting device and manufacturing method therefor, and display device
Haowei Wang, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN)
Appl. No. 18/030,090
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Jun. 22, 2021, PCT No. PCT/CN2021/101604
§ 371(c)(1), (2) Date Apr. 4, 2023,
PCT Pub. No. WO2022/266852, PCT Pub. Date Dec. 29, 2022.
Prior Publication US 2023/0371295 A1, Nov. 16, 2023
Int. Cl. H10K 59/38 (2023.01); H10K 50/115 (2023.01); H10K 50/125 (2023.01); H10K 50/15 (2023.01); H10K 59/80 (2023.01); H10K 71/40 (2023.01); H10K 85/30 (2023.01)
CPC H10K 59/38 (2023.02) [H10K 50/115 (2023.02); H10K 50/125 (2023.02); H10K 50/15 (2023.02); H10K 59/876 (2023.02); H10K 71/421 (2023.02); H10K 85/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising a plurality of pixel units, each of the pixel units comprises at least n sub-pixels capable of emitting light of n different colors, wherein:
each of the sub-pixels comprises:
a first electrode and a second electrode arranged oppositely;
a light-emitting layer located between the first electrode and the second electrode, wherein a light-emitting layer of at least one sub-pixel in at least one of the pixel units comprises a host quantum dot and at least one residual quantum dot of a different luminous color from the host quantum dot;
a color filter layer located on a side of the first electrode or the second electrode away from the light-emitting layer, and configured to transmit light emitted by the host quantum dot and prevent light emitted by the residual quantum dot from passing through.