US 12,477,907 B2
Display panel, display device, and manufacturing method of display panel
Shijian Qin, Guangdong (CN); and Xialiang Yuan, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong (CN)
Filed on Jul. 29, 2022, as Appl. No. 17/876,580.
Claims priority of application No. 202210792632.0 (CN), filed on Jul. 5, 2022.
Prior Publication US 2024/0016007 A1, Jan. 11, 2024
Int. Cl. H10K 59/123 (2023.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/123 (2023.02) [H10K 59/122 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A display panel, comprising:
a base substrate;
an inorganic layer disposed on the base substrate;
a thin film transistor layer comprising a source-drain layer and a buffer layer, wherein the thin film transistor layer is disposed on the inorganic layer and defined with a first opening exposing a part of the inorganic layer; and
an anode layer, wherein the anode layer comprises an anode comprising a first body, a connecting part, and a second body connected in sequence, wherein the first body is positioned on the part of the inorganic layer exposed by the first opening, the connecting part is positioned on a side wall of the first opening, and the second body is electrically connected to the source-drain layer;
wherein the display panel comprises a light shielding layer disposed on the inorganic layer, the light shielding layer and the first body are positioned in a same layer and are separated by the buffer layer.
 
12. A display panel, comprising:
a base substrate;
an inorganic layer disposed on the base substrate;
a thin film transistor layer comprising a source-drain layer and disposed on the inorganic layer, wherein the thin film transistor layer is defined with a first opening exposing a part of the inorganic layer;
an anode layer, wherein the anode layer comprises an anode comprising a first body, a connecting part, and a second body connected in sequence, wherein the first body is positioned on the part of the inorganic layer exposed by the first opening, the connecting part is positioned on a side wall of the first opening, and the second body is electrically connected to the source-drain layer; and
a light shielding layer positioned between the base substrate and the thin film transistor layer; wherein the thin film transistor layer comprises a buffer layer, an active layer, a first insulating layer, a gate layer, a second insulating layer, and the source-drain layer sequentially arranged in a direction away from the light shielding layer, wherein the source-drain layer comprises a source electrode electrically connected to the light shielding layer, and wherein the light shielding layer is positioned on the inorganic layer or is positioned in a same layer as the inorganic layer;
wherein a first sub-opening exposing the inorganic layer is defined on the buffer layer, a second sub-opening is defined on the second insulating layer at a position corresponding to the first sub-opening, and the first sub-opening and the second sub-opening form the first opening, and wherein a fifth opening exposing the light shielding layer is defined on the buffer layer, the second body of the anode layer is positioned on the buffer layer, the second body is electrically connected to the light shielding layer through the fifth opening, and the connecting part is positioned on a side wall of the first sub-opening.