US 12,477,899 B2
Organic light emitting display device for reducing leakage current in off state
Kyung-Su Kim, Paju-si (KR); Kyung-Mo Son, Paju-si (KR); and Eun-Sung Kim, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Aug. 5, 2022, as Appl. No. 17/882,411.
Claims priority of application No. 10-2021-0114584 (KR), filed on Aug. 30, 2021.
Prior Publication US 2023/0065335 A1, Mar. 2, 2023
Int. Cl. H10K 59/121 (2023.01); H10D 30/67 (2025.01); H10K 50/86 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/1213 (2023.02) [H10D 30/6755 (2025.01); H10K 50/865 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02)] 26 Claims
OG exemplary drawing
 
1. An organic light emitting display device, comprising:
a plurality of pixels each including a light emitting device connected to a data line crossing with a gate line;
a driving transistor disposed at each pixel, the driving transistor having a first oxide semiconductor pattern and supplying driving current to the light emitting device according to a data voltage applied from the data line; and
a plurality of switching transistors disposed at each pixel, the switching transistors including a first switching transistor and a second switching transistor supplying the data voltage according to a gate signal applied from the gate line;
wherein the second switching transistor includes a second oxide semiconductor pattern,
wherein the driving transistor includes a first light blocking layer overlapped with the first oxide semiconductor pattern at a lower portion of the first oxide semiconductor pattern, and the second switching transistor includes a second light blocking layer overlapped with the second oxide semiconductor pattern in a lower portion of the second oxide semiconductor pattern,
wherein the first oxide semiconductor pattern and the second oxide semiconductor pattern are disposed on a same layer, and the first light blocking layer and the second light blocking layer are disposed on different layers, so that a first distance between the first oxide semiconductor pattern and the first light blocking layer is smaller than a second distance between the second oxide semiconductor pattern and the second light blocking layer,
wherein the organic light emitting display device further comprises:
a silicon nitride layer deposited only on an upper surface and side surfaces of the first light blocking layer; and
an insulating layer disposed under the first oxide semiconductor pattern to enclose an upper surface and side surfaces of the silicon nitride layer.