US 12,477,868 B2
Light-emitting diode chip and light-emitting diode device
Jih-Kang Chen, Hsinchu (TW); Shiou-Yi Kuo, Hsinchu (TW); and Guo-Yi Shiu, Hsinchu (TW)
Assigned to Lextar Electronics Corporation, Hsinchu (TW)
Filed by Lextar Electronics Corporation, Hsinchu (TW)
Filed on May 10, 2022, as Appl. No. 17/662,658.
Claims priority of application No. 110130520 (TW), filed on Aug. 18, 2021.
Prior Publication US 2023/0057589 A1, Feb. 23, 2023
Int. Cl. H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/10 (2010.01); H10H 20/814 (2025.01); H10H 20/831 (2025.01)
CPC H10H 20/8312 (2025.01) [H01L 25/0753 (2013.01); H10H 20/814 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting diode chip, comprising:
a semiconductor layer having a sidewall, a top side and a bottom side opposite to the top side, wherein the sidewall connects the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer, the top side comprising a topmost surface;
an insulating layer covering the sidewall and the bottom side of the semiconductor layer, wherein the insulating layer has a protruding portion extending and protruding above the top side of the semiconductor layer along a direction parallel to the sidewall;
a first electrode on the bottom side of the semiconductor layer and penetrating through the insulating layer; and
a second electrode adjacent to the first electrode, wherein the second electrode is on the bottom side of the semiconductor layer and penetrates through the insulating layer;
wherein, the protruding portion and another portion of the insulating layer have the same material;
wherein, the protruding portion of the insulating layer does not cover the topmost surface of the top side of the semiconductor layer.