| CPC H10H 20/821 (2025.01) [H01L 25/0753 (2013.01); H10H 20/8316 (2025.01); H10H 20/857 (2025.01)] | 20 Claims |
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1. A light emitting element comprising:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer;
a second semiconductor layer disposed on the active layer;
a third semiconductor layer comprising a third-first semiconductor layer and a third-second semiconductor layer stacked on the second semiconductor layer; and
a fourth semiconductor layer disposed on the third-second semiconductor layer,
wherein
the third semiconductor layer is a tunneling junction layer,
a sum of a thickness of the fourth semiconductor layer and the third-second semiconductor layer is different from a sum of a thickness of the second semiconductor layer and the third-first semiconductor layer,
a first surface of the active layer, which is attached to the second semiconductor layer, is disposed above a half point of the light emitting element, and
a second surface of the active layer, which is attached to the first semiconductor layer is disposed below the half point of the light emitting element.
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