US 12,477,839 B2
Semiconductor photodetector
Takashi Toyonaka, Yokohama (JP); Hiroshi Hamada, Yokohama (JP); Ryu Washino, Yokohama (JP); Shigetaka Hamada, Sagamihara (JP); and Suguru Kato, Sagamihara (JP)
Assigned to Lumentum Operations, San Jose, CA (US)
Filed by Lumentum Operations LLC, San Jose, CA (US)
Filed on Mar. 28, 2023, as Appl. No. 18/127,423.
Claims priority of application No. 2022-204354 (JP), filed on Dec. 21, 2022; and application No. 2023-017340 (JP), filed on Feb. 8, 2023.
Prior Publication US 2024/0213389 A1, Jun. 27, 2024
Int. Cl. H10F 30/223 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/20 (2025.01)
CPC H10F 30/223 (2025.01) [H10F 77/1248 (2025.01); H10F 77/147 (2025.01); H10F 77/206 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor photodetector comprising:
a substrate;
a mesa structure on the substrate, the mesa structure comprising layers including an upper layer and a lower layer, the upper layer being an absorption layer of light, the lower layer being a wide bandgap layer with a bandgap wide enough not to absorb the light; and
an insulating film covering a side of the mesa structure,
each of the layers comprising single crystals of III-V semiconductors and having a top associated with a (100) plane,
the top of the wide bandgap layer having a shape including a pair of vertices, in [0-11] and [01-1] directions, on a circumference of a minimum bounding circle.