US 12,477,838 B2
Solar cell and photovoltaic module
Jingsheng Jin, Zhejiang (CN); and Guangming Liao, Zhejiang (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by Zhejiang Jinko Solar Co., Ltd., Zhejiang (CN); and Jinko Solar Co., Ltd., Jiangxi (CN)
Filed on Mar. 27, 2024, as Appl. No. 18/617,788.
Application 18/617,788 is a continuation of application No. 18/178,228, filed on Mar. 3, 2023, granted, now 12,027,641.
Claims priority of application No. 202211544085.0 (CN), filed on Nov. 30, 2022.
Prior Publication US 2024/0234613 A1, Jul. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 10/174 (2025.01); H10F 19/80 (2025.01); H10F 19/90 (2025.01); H10F 77/00 (2025.01); H10F 77/122 (2025.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01)
CPC H10F 10/174 (2025.01) [H10F 19/80 (2025.01); H10F 77/311 (2025.01); H10F 77/315 (2025.01); H10F 19/906 (2025.01); H10F 77/122 (2025.01); H10F 77/211 (2025.01); H10F 77/935 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a substrate including a front surface and a back surface;
a tunneling layer formed on the back surface of the substrate;
a doped conductive layer formed on the tunneling layer;
an intrinsic polycrystalline silicon layer formed on the doped conductive layer;
a first passivation layer formed on the intrinsic polycrystalline silicon layer; and
a first electrode formed on the first passivation layer,
wherein the first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer,
wherein the intrinsic polycrystalline silicon layer is selectively formed between the first electrode and the doped conductive layer, and
wherein the first passivation layer includes a first part covering the intrinsic polycrystalline silicon layer and a second part in direct contact with the doped conductive layer.