US 12,477,837 B2
Semiconductor device and manufacturing method thereof
Shunpei Yamazaki, Tokyo (JP); Naoki Okuno, Kanagawa (JP); Yuichi Sato, Kanagawa (JP); Takashi Hirose, Kanagawa (JP); and Yuko Takabayashi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Appl. No. 17/641,569
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Sep. 30, 2020, PCT No. PCT/IB2020/059121
§ 371(c)(1), (2) Date Mar. 9, 2022,
PCT Pub. No. WO2021/070007, PCT Pub. Date Apr. 15, 2021.
Claims priority of application No. 2019-187495 (JP), filed on Oct. 11, 2019; and application No. 2019-226701 (JP), filed on Dec. 16, 2019.
Prior Publication US 2022/0416059 A1, Dec. 29, 2022
Int. Cl. H10D 30/67 (2025.01); H10B 12/00 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01); H10D 99/00 (2025.01)
CPC H10D 99/00 (2025.01) [H10B 12/00 (2023.02); H10D 30/6734 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulator;
forming an oxide film over the first insulator;
performing a first heat treatment;
forming a first conductive film, a first insulating film, and a second insulating film in this order over the oxide film;
processing the oxide film, the first conductive film, the first insulating film, and the second insulating film into an island shape to form an oxide, a conductive layer, a first insulating layer, and a second insulating layer;
forming a second insulator over the first insulator, the oxide, the conductive layer, the first insulating layer, and the second insulating layer;
forming a third insulator over the second insulator;
forming an opening reaching the oxide in the conductive layer, the first insulating layer, the second insulating layer, the second insulator, and the third insulator;
performing a second heat treatment;
forming a third insulating film over the third insulator and the opening;
performing a first microwave treatment;
forming a fourth insulating film over the third insulating film;
performing a second microwave treatment;
forming a second conductive film over the fourth insulating film;
performing a CMP treatment on the third insulating film, the fourth insulating film, and the second conductive film until a top surface of the third insulator is exposed to form an eighth insulator, a ninth insulator, and a third conductor; and
forming a tenth insulator over the third insulator, the eighth insulator, the ninth insulator, and the third conductor,
wherein in formation of the opening, a first conductor and a second conductor are formed from the conductive layer, a fourth insulator and a fifth insulator are formed from the first insulating layer, and a sixth insulator and a seventh insulator are formed from the second insulating layer.