US 12,477,827 B2
Driving substrate with a thin film transistor having overlapped metal layers and semiconductor layer
May Pan, Tainan (TW)
Assigned to Innolux Corporation, Miao-Li County (TW)
Filed by Innolux Corporation, Miao-Li County (TW)
Filed on Jan. 19, 2024, as Appl. No. 18/417,329.
Application 18/417,329 is a continuation of application No. 17/984,061, filed on Nov. 9, 2022, granted, now 11,916,080.
Application 17/984,061 is a continuation of application No. 17/217,877, filed on Mar. 30, 2021, granted, now 11,527,555, issued on Dec. 13, 2022.
Prior Publication US 2024/0153960 A1, May 9, 2024
Int. Cl. H10D 86/60 (2025.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01)
CPC H10D 86/60 (2025.01) [G02F 1/136281 (2021.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G02F 1/13685 (2021.01); H10D 30/6732 (2025.01); H10D 30/6746 (2025.01); H10D 30/6757 (2025.01); H10D 86/421 (2025.01); G02F 2202/103 (2013.01); G02F 2202/28 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A driving substrate, comprising:
a substrate; and
a thin film transistor disposed on the substrate and comprising:
a first metal layer having a first island shape portion, a second island shape portion, and a first bridge extending along a first direction, wherein in a second direction perpendicular to the first direction, a width of the first bridge is less than both a width of the first island shape portion and a width of the second island shape portion;
a second metal layer having a third portion, a fourth portion, and a second bridge; and
a semiconductor, wherein the first metal layer, the second metal layer, and the semiconductor are overlapped with each other;
wherein in a top view, the first island shape portion and the second island shape portion are separated by a first gap and are connected by the first bridge, the third portion and the fourth portion are separated by the first gap and are connected by the second bridge.