US 12,477,825 B2
Electronic device and wiring structure thereof
Yu-Lin Wang, Hsinchu (TW); and Wei-Tsung Chen, Hsinchu (TW)
Assigned to E Ink Holdings Inc., Hsinchu (TW)
Filed by E Ink Holdings Inc., Hsinchu (TW)
Filed on Apr. 1, 2022, as Appl. No. 17/657,633.
Claims priority of provisional application 63/178,539, filed on Apr. 23, 2021.
Prior Publication US 2022/0344373 A1, Oct. 27, 2022
Int. Cl. H10D 86/60 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01)
CPC H10D 86/60 (2025.01) [H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/443 (2025.01); H10D 86/451 (2025.01)] 17 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a substrate;
a wiring structure, disposed on the substrate, wherein the wiring structure is a multilayer structure and comprises:
an inner metal layer, disposed on the substrate, wherein the inner metal layer includes a first metal layer, a second metal layer, and a third metal layer directly stacked in order, wherein the first and third metal layers contain molybdenum and the second metal layer contains no molybdenum; and
an outer metal layer, directly stacked on the inner metal layer, wherein the outer metal layer contains no molybdenum;
an oxide insulating layer, disposed on the wiring structure and contacting the outer metal layer directly; and
a nitride insulating layer, disposed on the oxide insulating layer, wherein the oxide insulating layer is positioned between the nitride insulating layer and the outer metal layer.