US 12,477,799 B2
Nitride semiconductor and semiconductor device
Toshiki Hikosaka, Kawasaki (JP); Hajime Nago, Yokohama (JP); Hisashi Yoshida, Kawasaki (JP); and Jumpei Tajima, Mitaka (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/817,789.
Claims priority of application No. 2022-036878 (JP), filed on Mar. 10, 2022.
Prior Publication US 2023/0317796 A1, Oct. 5, 2023
Int. Cl. H01L 29/15 (2006.01); H10D 30/47 (2025.01); H10D 62/815 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 62/8171 (2025.01) [H10D 30/4738 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A nitride semiconductor, comprising:
a nitride member, the nitride member including
a first nitride region including Alx1Ga1-x1N (0<x1≤1),
a second nitride region including Alx2Ga1-x2N (0≤x2<1, x2<x1), and
a third nitride region including Alx3Ga1-x3N (0≤x3<1, x3<x1),
the second nitride region being provided between the first nitride region and the third nitride region in a first direction from the first nitride region to the second nitride region,
the second nitride region including carbon and oxygen,
the first nitride region not including carbon, or a second carbon concentration in the second nitride region being higher than a first carbon concentration in the first nitride region,
the second carbon concentration being higher than a third carbon concentration in the third nitride region,
a ratio of a first oxygen concentration in the second nitride region to the second carbon concentration being not less than 1.0×10−4 and not more than 1.4×10−3.