US 12,477,777 B2
Thin film transistor, display substrate and display device
Jie Huang, Beijing (CN); Ce Ning, Beijing (CN); Zhengliang Li, Beijing (CN); Hehe Hu, Beijing (CN); Niangi Yao, Beijing (CN); Kun Zhao, Beijing (CN); and Feifei Li, Beijing (CN)
Assigned to BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., Beijing (CN)
Appl. No. 18/021,778
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Mar. 31, 2022, PCT No. PCT/CN2022/084618
§ 371(c)(1), (2) Date Feb. 16, 2023,
PCT Pub. No. WO2023/184421, PCT Pub. Date Oct. 5, 2023.
Prior Publication US 2024/0274674 A1, Aug. 15, 2024
Int. Cl. H10D 30/67 (2025.01)
CPC H10D 30/6729 (2025.01) [H10D 30/673 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A thin film transistor, comprising:
a gate disposed on a base substrate;
an active layer located between the gate and the base substrate and insulated and spaced from the gate, where the active layer comprises a source contact portion, a drain contact portion and a middle portion located between the source contact portion and the drain contact portion, and an orthographic projection of the middle portion on the base substrate is overlapped with an orthographic projection of the gate on the base substrate to form a first overlapping region, a material of the middle portion comprises a metal oxide containing a doped element, and a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; and
a source and a drain, the source being electrically connected to the source contact portion, the drain being electrically connected to the drain contact portion,
wherein a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.