US 12,477,769 B2
Semiconductor device in which current collapse and leakage current between source and drain regions are suppressed
Yosuke Kajiwara, Yokohama (JP); and Masahiko Kuraguchi, Yokohama (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Feb. 23, 2022, as Appl. No. 17/652,167.
Claims priority of application No. 2021-121245 (JP), filed on Jul. 26, 2021.
Prior Publication US 2023/0022819 A1, Jan. 26, 2023
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 30/476 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode including a first electrode portion, a position of the first electrode portion in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, a direction from the first partial region to the first electrode being along a second direction crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction, a position of the sixth partial region in the first direction being between the position of the fifth partial region in the first direction and the position of the second partial region in the first direction;
a second semiconductor region including Alx2Ga1-x2N (x1<x2<1), the second semiconductor region including a first semiconductor portion, and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion being along the second direction, a direction from the fifth partial region to the second semiconductor portion being along the second direction, the second semiconductor portion being in contact with the fifth partial region;
a nitride region including Aly1Ga1-y1N (x2<y1≤1), the nitride region including a first nitride portion, a direction from the sixth partial region to the first nitride portion being along the second direction, the first nitride portion being in direct contact with the sixth partial region, a direction from the second semiconductor portion to the first nitride portion being along the first direction; and
a first insulating member including a first insulating region, the first insulating region being between the third partial region and the first electrode portion in the second direction,
wherein
a first thickness of the second semiconductor portion along the second direction is thicker than a second thickness of the first nitride portion along the second direction,
the first electrode physically contacts the first semiconductor portion, and
the second electrode is electrically connected to the first nitride portion.