US 12,477,768 B2
SiC static induction transistor with double side cooling and method of manufacture
Dumitru G. Sdrulla, Bend, OR (US); Amaury Gendron-Hansen, Bend, OR (US); and Wang-Chang A. Gu, Bend, OR (US)
Assigned to Analog Power Conversion LLC, Bend, OR (US)
Filed by Analog Power Conversion LLC, Bend, OR (US)
Filed on May 2, 2023, as Appl. No. 18/311,159.
Prior Publication US 2024/0371989 A1, Nov. 7, 2024
Int. Cl. H10D 30/00 (2025.01); H01L 23/373 (2006.01); H01L 23/528 (2006.01); H10D 12/01 (2025.01); H10D 62/832 (2025.01); H10D 64/64 (2025.01)
CPC H10D 30/202 (2025.01) [H01L 23/3736 (2013.01); H01L 23/5286 (2013.01); H10D 12/031 (2025.01); H10D 62/8325 (2025.01); H10D 64/64 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A silicon carbide (SiC) static induction transistor (SIT), comprising:
a source disposed under a top surface of the transistor;
a gate disposed over the source and configured to receive a control signal;
a drain disposed over the gate and configured to generate an output signal;
an epitaxial pattern disposed between the source and the drain and including a protruding portion; and
a gate bus electrically coupled to the gate and including carbon.