| CPC H10D 30/024 (2025.01) [H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H10D 30/6211 (2025.01); H10D 62/151 (2025.01); H10D 84/0158 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01)] | 20 Claims |
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1. A method comprising:
forming a semiconductor fin extending from a substrate;
forming a dummy gate stack over the semiconductor fin, the dummy gate stack extending along sidewalls and a top surface of the semiconductor fin;
patterning the semiconductor fin to form a recess in the semiconductor fin;
depositing a semiconductor material in the recess;
performing an implantation process on the semiconductor material, wherein performing the implantation process comprises:
implanting first implants into the semiconductor material, implanting the first implants using a first implantation energy; and
implanting second implants into the semiconductor material, implanting the second implants using a second implantation energy different from the first implantation energy, wherein the first implants and the second implants are dopants of a same conductivity type, wherein the first implants are same as the second implants;
after performing the implantation process, forming one or more dielectric layers over the semiconductor material; and
forming a contact through the one or more dielectric layers to the semiconductor material.
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8. A method comprising:
forming a semiconductor fin extending from a substrate;
forming a dummy gate stack over the semiconductor fin, the dummy gate stack overlapping the semiconductor fin in a plan view;
etching the semiconductor fin to form a recess in the semiconductor fin;
epitaxially growing a semiconductor material in the recess;
performing a first implantation process on the semiconductor material, the first implantation process implanting first implants into the semiconductor material;
after performing the first implantation process, performing a second implantation process on the semiconductor material, the second implantation process implanting second implants into the semiconductor material; and
after performing the second implantation process, performing an anneal process on the semiconductor material, the anneal process forming a doped region in the semiconductor fin at an interface between the semiconductor material and the semiconductor fin, wherein the semiconductor material and the doped region extend into the semiconductor fin to a same depth.
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14. A method comprising:
forming a recess in a first semiconductor material;
forming a second semiconductor material in the recess;
performing a first implantation process on the second semiconductor material, wherein performing the first implantation process comprises implanting first dopants using a first implantation energy;
performing a second implantation process on the second semiconductor material, wherein performing the second implantation process comprises implanting the first dopants using a second implantation energy different from the first implantation energy; and
after performing the first implantation process and the second implantation process, performing an anneal process, the anneal process driving at least some of the first dopants from the first implantation process and at least some of the first dopants from the second implantation process into the first semiconductor material, wherein the first dopants implanted in the first implantation process and the first dopants implanted in the second implantation process are dopants of a same conductivity type.
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