US 12,477,748 B2
Variable resistance memory device and electronic device including the same
Seyun Kim, Suwon-si (KR); Jooheon Kang, Suwon-si (KR); Sunho Kim, Suwon-si (KR); Yumin Kim, Suwon-si (KR); Garam Park, Suwon-si (KR); Hyunjae Song, Suwon-si (KR); Dongho Ahn, Suwon-si (KR); Seungyeul Yang, Suwon-si (KR); Myunghun Woo, Suwon-si (KR); and Jinwoo Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 12, 2023, as Appl. No. 18/299,403.
Claims priority of application No. 10-2022-0104269 (KR), filed on Aug. 19, 2022; and application No. 10-2022-0153995 (KR), filed on Nov. 16, 2022.
Prior Publication US 2024/0065001 A1, Feb. 22, 2024
Int. Cl. H10B 63/00 (2023.01)
CPC H10B 63/845 (2023.02) [H10B 63/34 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A variable resistance memory device comprising:
a resistance change layer comprising a metal oxide that includes a first metal element and a second metal element, the metal oxide having an oxygen deficient ratio greater than or equal to about 9%;
a semiconductor layer on the resistance change layer;
a gate insulating layer on the semiconductor layer; and
a plurality of electrodes on the gate insulating layer to be apart from each other.