US 12,477,730 B2
Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming
Yifen Liu, Meridian, ID (US); Xin Lan, Singapore (SG); Byeung Chul Kim, Boise, ID (US); Ye Xiang Hong, Singapore (SG); Yun Huang, Singapore (SG); and Sok Han Wong, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 31, 2022, as Appl. No. 17/804,752.
Prior Publication US 2023/0389311 A1, Nov. 30, 2023
Int. Cl. H01L 27/11578 (2017.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10D 62/10 (2025.01)
CPC H10B 43/20 (2023.02) [H10B 43/10 (2023.02); H10D 62/115 (2025.01)] 18 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a stack structure comprising vertically alternating dielectric materials and conductive materials, the conductive materials comprising first regions and second regions;
at least one pillar extending vertically continuously through the stack structure, the first regions of the conductive materials distal from the at least one pillar and the second regions of the conductive materials proximal to the at least one pillar, and the at least one pillar comprising a fill material, a channel material surrounding the fill material, and a tunneling material surrounding the channel material; and
one or more segments of materials disposed between the at least one pillar and the second regions of the conductive materials, the one or more segments of materials convexly extending away from the second regions of the conductive materials, and the one or more segments of materials individually comprising a storage node material laterally adjacent to the at least one pillar, a high-k dielectric material laterally adjacent to the second regions of the conductive materials, and a barrier oxide material disposed laterally between the high-k dielectric material and the storage node material.