US 12,476,632 B2
Temperature-adaptive gate driver for GaN switch
Syed Asif Eqbal, Bihar (IN); and Arnesh Sen, Howrah (IN)
Filed by Tagore Technology, Inc., Arlington Heights, IL (US)
Filed on Oct. 17, 2023, as Appl. No. 18/488,114.
Prior Publication US 2025/0125798 A1, Apr. 17, 2025
Int. Cl. H03K 17/00 (2006.01); H03K 17/14 (2006.01)
CPC H03K 17/145 (2013.01) [H03K 2217/0081 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A temperature-adaptive gate driver for a GaN switch, comprising:
a GaN switch disposed on a GaN substrate;
a driver disposed on another substrate for outputting an on-state gate-to-source voltage to a gate terminal of the GaN switch;
a gate-to-source voltage adjustment unit, disposed on the other substrate, for outputting an output signal to the driver,
wherein the gate-to-source voltage adjustment unit includes a temperature sense element for sensing temperature of the GaN switch; and
wherein the on-state gate-to-source voltage is adjustable based, in part, on the temperature of the GaN switch.