US 12,476,609 B2
Resonator and manufacturing method thereof, filter, and electronic device
Hangtian Hou, Shanghai (CN); Bo Du, Shenzhen (CN); Peng Liu, Shenzhen (CN); and Zongzhi Gao, Shanghai (CN)
Assigned to Huawei Technologies Co., Ltd., Shenzhen (CN)
Filed by Huawei Technologies Co., Ltd., Shenzhen (CN)
Filed on Mar. 22, 2023, as Appl. No. 18/187,846.
Application 18/187,846 is a continuation of application No. PCT/CN2020/117230, filed on Sep. 23, 2020.
Prior Publication US 2023/0231537 A1, Jul. 20, 2023
Int. Cl. H03H 9/17 (2006.01); H03H 3/02 (2006.01); H03H 9/56 (2006.01)
CPC H03H 9/175 (2013.01) [H03H 3/02 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 2003/025 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A resonator, comprising: a substrate, a Bragg reflection layer, and a piezoelectric layer that are sequentially stacked, wherein
a first electrode is disposed on a surface of the piezoelectric layer that faces the Bragg reflection layer, a second electrode is disposed on a surface of the piezoelectric layer that faces away from the Bragg reflection layer, a border ring is disposed on a surface of the second electrode that faces away from the piezoelectric layer, and the resonator has a first resonance region and a second resonance region corresponding to the border ring; and
along a stacking direction, the Bragg reflection layer comprises a low acoustic-impedance structure and a first high acoustic-impedance structure embedded in the low acoustic-impedance structure, wherein the first high acoustic-impedance structure comprises a discontinuous structure corresponding to the second resonance region.