| CPC H02M 3/33573 (2021.05) [H02M 1/327 (2021.05); H02M 3/003 (2021.05)] | 18 Claims |
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1. A power conversion device, comprising:
a transformer having a primary winding and a secondary winding;
an inverter circuit that carries out a supply of power to the primary winding;
a rectifying circuit that rectifies power from the secondary winding;
a cooler that cools semiconductor elements configuring the inverter circuit and semiconductor elements configuring the rectifying circuit;
and a temperature detector that detects a temperature of the semiconductor elements configuring the inverter circuit and the semiconductor elements configuring the rectifying circuit, wherein
the cooler has a refrigerant channel along which a refrigerant is caused to circulate,
the inverter circuit, the rectifying circuit, and the temperature detector are disposed above the refrigerant channel when viewed in a cross-section,
and the temperature detector is disposed between or beside the inverter circuit and the rectifier circuit when viewed in a plan and is neighboring at least either one of the inverter circuit or the rectifying circuit,
wherein the inverter circuit and the rectifying circuit include a multiple of semiconductor elements, the inverter circuit includes a first semiconductor element whose distance to the temperature detector is shortest and a second semiconductor element whose distance to the temperature detector is longest among the multiple of semiconductor elements included in the inverter circuit,
the rectifying circuit includes a third semiconductor element whose distance to the temperature detector is shortest and a fourth semiconductor element whose distance to the temperature detector is longest among the multiple of semiconductor elements included in the rectifying circuit,
a distance between the first semiconductor element and the temperature detector is shorter than a distance between the second semiconductor element and the third semiconductor element, and a distance between the third semiconductor element and the temperature detector is shorter than a distance between the first semiconductor element and the fourth semiconductor element.
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