| CPC H01M 4/0428 (2013.01) [C04B 35/528 (2013.01); C04B 35/62839 (2013.01); C04B 35/62884 (2013.01); C04B 35/62894 (2013.01); C23C 16/045 (2013.01); C23C 16/24 (2013.01); C23C 16/26 (2013.01); C23C 16/4417 (2013.01); H01M 4/1395 (2013.01); H01M 4/362 (2013.01); H01M 4/386 (2013.01); H01M 4/625 (2013.01); C04B 2235/422 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5409 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] | 41 Claims |
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1. A process for preparing silicon-containing composite particles, comprising the steps of:
(a) providing a plurality of porous particles having pores comprising micropores and/or mesopores, wherein:
(i) a D50 particle diameter of the porous particles is in the range from 0.5 to 200 μm;
(ii) a total pore volume of micropores and mesopores as measured by gas adsorption is in the range from 0.4 to 2.2 cm3/g;
(iii) a PD50 pore diameter of the porous particles as measured by gas adsorption is no more than 30 nm;
(b) combining a charge of the porous particles with a charge of a silicon-containing precursor in a batch pressure reactor, wherein the charge of the porous particles has a volume of at least 20 cm3 per litre of reactor volume (cm3/LRV), and wherein the charge of the silicon-containing precursor comprises at least 2 g of silicon per litre of reactor volume (g/LRV); and
(c) heating the reactor to a temperature effective to cause deposition of silicon in the pores of the porous particles, thereby providing the silicon-containing composite particles.
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