US 12,476,223 B2
Semiconductor package and method of manufacturing the same
Chia-Kuei Hsu, Hsinchu (TW); Feng-Cheng Hsu, New Taipei (TW); Ming-Chih Yew, Hsinchu (TW); Po-Yao Lin, Hsinchu County (TW); Shuo-Mao Chen, New Taipei (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconducotr Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 18, 2021, as Appl. No. 17/206,098.
Prior Publication US 2022/0302081 A1, Sep. 22, 2022
Int. Cl. H01L 21/50 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 21/50 (2013.01); H01L 21/768 (2013.01); H01L 23/31 (2013.01); H01L 23/5386 (2013.01); H01L 24/14 (2013.01); H01L 2224/0401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a semiconductor die having an active side and a rear side opposite to the active side;
a redistribution circuit structure, located on and electrically coupled to the semiconductor die, the redistribution circuit structure comprising a plurality of metallization layers and a plurality of dielectric layers being arranged in alternation, wherein the active side is closer to the redistribution circuit structure than the rear side;
a supporting structure, located on and in contact with an outermost surface of the redistribution circuit structure, wherein the supporting structure is overlapped with at least a part of the semiconductor die in a vertical projection on the redistribution circuit structure along a stacking direction of the redistribution circuit structure and the supporting structure, and the supporting structure is electrically isolated from the redistribution circuit structure;
a first auxiliary supporting structure, embedded in the redistribution circuit structure, wherein the first auxiliary supporting structure is electrically isolated from the redistribution circuit structure and physically separated from the supporting structure; and
a protective layer, located on the supporting structure, wherein the supporting structure is sandwiched between the protective layer and the redistribution circuit structure, and a sidewall and an outermost surface of the supporting structure are in complete contact with the protective layer, wherein the outermost surface of the supporting structure is facing away from the redistribution circuit structure.