US 12,476,211 B2
Semiconductor device
Chien-Hao Hsu, Hsinchu County (TW); Yen-Kun Lai, New Taipei (TW); Wei-Hsiang Tu, Hsinchu (TW); Hao-Chun Liu, Hsinchu (TW); Kuo-Chin Chang, Chiayi (TW); and Mirng-Ji Lii, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 23, 2024, as Appl. No. 18/672,010.
Application 18/672,010 is a continuation of application No. 17/460,344, filed on Aug. 30, 2021, granted, now 12,021,048.
Prior Publication US 2024/0332230 A1, Oct. 3, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/06 (2013.01) [H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 2224/0401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor die;
a first conductive pad disposed on the semiconductor die, wherein the first conductive pad has a first top view profile;
a second conductive pad disposed on the semiconductor die, wherein the second conductive pad has a second top view profile, and is further away from a corner of the semiconductor die than the first conductive pad;
a first connector structure disposed on the first conductive pad, wherein the first connector structure has a third top view profile and the first top view profile is within the third top view profile;
a conductive wiring, wherein the conductive wiring is of the same layer as the first conductive pad and laterally extends to intersect with a portion of the third top view profile of the first connector structure; and
a second connector structure disposed on the second conductive pad, wherein the second connector structure has a fourth top view profile and the fourth top view profile is within the second top view profile.