| CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/7682 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); H01L 23/5329 (2013.01)] | 19 Claims |
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1. A semiconductor device comprising:
a first interlayer insulating film defining a lower wiring trench;
a lower wiring structure comprising a first lower barrier film which extends along at least two sidewalls of the lower wiring trench, and a lower filling film which is on the first lower barrier film;
a second interlayer insulating film on the first interlayer insulating film, the second interlayer insulating film defining an upper wiring trench which exposes at least part of the lower wiring structure; and
an upper wiring structure provided in the upper wiring trench and connected to the lower wiring structure,
wherein an upper surface of the first lower barrier film is closer to a bottom surface of the lower wiring trench than each of an upper surface of the first interlayer insulating film and an upper surface of the lower filling film,
wherein the upper surface of the first lower barrier film is concave,
wherein the lower wiring structure further comprises a second lower barrier film, which is between the first lower barrier film and the lower filling film, and extends along the at least two sidewalls of the lower wiring trench, and
wherein the upper surface of the first lower barrier film is closer to the bottom surface of the lower wiring trench than an upper surface of the second lower barrier film.
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