US 12,476,175 B2
Glass substrates having transverse capacitors for use with semiconductor packages and related methods
Benjamin T. Duong, Phoenix, AZ (US); Srinivas V. Pietambaram, Chandler, AZ (US); Aleksandar Aleksov, Chandler, AZ (US); Helme Castro De La Torre, Gilbert, AZ (US); Kristof Darmawikarta, Chandler, AZ (US); Darko Grujicic, Chandler, AZ (US); Sashi S. Kandanur, Chandler, AZ (US); Suddhasattwa Nad, Chandler, AZ (US); Rengarajan Shanmugam, Chandler, AZ (US); Thomas I. Sounart, Chandler, AZ (US); and Marcel A. Wall, Phoenix, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 24, 2021, as Appl. No. 17/485,039.
Prior Publication US 2023/0095846 A1, Mar. 30, 2023
Int. Cl. H05K 1/11 (2006.01); H01G 4/33 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H05K 1/16 (2006.01); H05K 1/18 (2006.01); H01G 4/30 (2006.01); H05K 1/02 (2006.01)
CPC H01L 23/49822 (2013.01) [H01G 4/33 (2013.01); H01L 21/486 (2013.01); H05K 1/111 (2013.01); H05K 1/115 (2013.01); H05K 1/16 (2013.01); H05K 1/18 (2013.01); H05K 1/182 (2013.01); H01G 4/306 (2013.01); H05K 1/0231 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a glass substrate having a through glass via, the through glass via having a length extending between a first surface of the glass substrate and a second surface of the glass substrate opposite the first surface; and
a transverse capacitor located in the through glass via, the transverse capacitor including:
a dielectric material in a first portion of the length of the through glass via, the dielectric material absent from second and third portions of the length of the through glass via, the second portion distinct from the first portion, the third portion distinct from the first portion and distinct from the second portion;
a first barrier layer in the second portion of the length of the through glass via, the first barrier layer absent from the first and third portions; and
a first conductive material in a third portion of the length of the through glass via, the first conductive material absent from the first and second portions.