US 12,476,173 B2
Electronic device with post mold plated nickel tungsten and tin bilayer for improved board level reliability
Nazila Dadvand, Santa Clara, CA (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Apr. 28, 2023, as Appl. No. 18/308,956.
Prior Publication US 2024/0363504 A1, Oct. 31, 2024
Int. Cl. H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49582 (2013.01) [H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/4951 (2013.01); H01L 23/4952 (2013.01); H01L 23/49541 (2013.01); H01L 23/49575 (2013.01); H01L 24/48 (2013.01); H01L 2224/48247 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a semiconductor die;
a package structure enclosing the semiconductor die; and
a conductive lead having a first surface and a second surface, the first surface having a bilayer exposed outside the package structure along a side of the package structure, and the second surface exposed outside the package structure along another side of the package structure, the bilayer including a first plated layer and a second plated layer, the first plated layer on and contacting the first surface of the conductive lead, the second plated layer on and contacting the first plated layer and exposed outside the package structure along the side of the package structure, the first plated layer including nickel tungsten, and the second plated layer including tin.