US 12,476,156 B2
Semiconductor chip and method for manufacturing the same
Masatake Nagaya, Nisshin (JP); Hiroki Watanabe, Nisshin (JP); Junji Ohara, Nisshin (JP); Daisuke Kawaguchi, Hamamatsu (JP); Keisuke Hara, Hamamatsu (JP); Chiaki Sasaoka, Nagoya (JP); Jun Kojima, Nagoya (JP); and Shoichi Onda, Nagoya (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); HAMAMATSU PHOTONICS K.K., Hamamatsu (JP); and National University Corporation Tokai National Higher Education and Research System, Nagoya (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); HAMAMATSU PHOTONICS K.K., Hamamatsu (JP); and National University Corporation Tokai National Higher Education and Research System, Nagoya (JP)
Filed on Sep. 20, 2022, as Appl. No. 17/948,329.
Claims priority of application No. 2021-166151 (JP), filed on Oct. 8, 2021.
Prior Publication US 2023/0116302 A1, Apr. 13, 2023
Int. Cl. H01L 23/14 (2006.01); H01L 23/13 (2006.01); H10D 84/05 (2025.01)
CPC H01L 23/147 (2013.01) [H01L 23/13 (2013.01); H10D 84/05 (2025.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor chip comprising:
a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface, the chip-constituting substrate containing a hexagonal gallium nitride,
wherein
the one surface and the other surface are along one of a {0001} c-plane, a {1-100} m-plane, and a {11-20} a-plane,
one of the two pairs of opposing side surfaces is along another one of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane,
the other of the two pairs of opposing side surfaces is along the other of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane,
the side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface, and
the altered layer is formed in a range of 20 nm or less from the side surface in the depth direction.