US 12,476,135 B2
Semiconductor package and method
Chen-Hua Yu, Hsinchu (TW); Wei-Yu Chen, Hsinchu (TW); Jiun Yi Wu, Zhongli (TW); Chung-Shi Liu, Hsinchu (TW); and Chien-Hsun Lee, Chu-tung Town (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 18, 2021, as Appl. No. 17/205,383.
Claims priority of provisional application 63/127,299, filed on Dec. 18, 2020.
Prior Publication US 2022/0199461 A1, Jun. 23, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 21/60 (2006.01)
CPC H01L 21/76802 (2013.01) [H01L 21/56 (2013.01); H01L 23/31 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 2021/60022 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method, comprising:
attaching a plurality of interconnect structures to a carrier substrate, wherein each interconnect structure of the plurality of interconnect structures individually comprises:
a redistribution structure;
a first encapsulant on the redistribution structure;
an interconnect component in the first encapsulant, the interconnect component comprising electrical routing, the interconnect component being surrounded by the first encapsulant, the interconnect component and the redistribution structure being vertically separated by the first encapsulant;
a via extending through the first encapsulant to physically and electrically connect to the redistribution structure;
depositing a second encapsulant on the plurality of interconnect structures, wherein adjacent interconnect structures of the plurality of interconnect structures are laterally separated by the second encapsulant;
after depositing the second encapsulant and removing the carrier substrate;
after depositing the second encapsulant and the removing the carrier substrate, attaching a first core substrate to the redistribution structure of at least one interconnect structure of the plurality of interconnect structures, wherein the first core substrate is electrically connected directly to the redistribution structure, wherein the first core substrate is attached to a first side of the plurality of interconnect structures; and
attaching a plurality of semiconductor devices to the plurality of interconnect structures, wherein each semiconductor device of the plurality of semiconductor devices is electrically connected to the via of a respective interconnect structure of the plurality of interconnect structures, wherein the plurality of semiconductor devices are attached to a second side of the plurality of interconnect structures that is opposite the first side.