| CPC H01L 21/6838 (2013.01) [H01L 23/32 (2013.01); H01L 23/5387 (2013.01); H01L 23/562 (2013.01)] | 20 Claims |

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1. A method of forming a curved semiconductor die system, the method comprising:
coupling a die curvature support structure to a surface of a semiconductor die; and
inducing warpage in the surface of the semiconductor die through one of rotating or bending the die curvature support structure against the surface of the semiconductor die prior to directly bonding a second surface of the semiconductor die opposite the surface of the semiconductor die facing the die curvature support structure to a curved surface.
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