US 12,476,106 B2
Selective deposition of organic material
Eva Tois, Espoo (FI); Daniele Chiappe, Espoo (FI); Marko Tuominen, Helsinki (FI); Viraj Madhiwala, Helsinki (FI); Charles Dezelah, Helsinki (FI); YongGyu Han, Seoul (KR); Anirudhan Chandrasekaran, Scottsdale, AZ (US); and Shaoren Deng, Ghent (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding, B.V., Almere (NL)
Filed on Sep. 29, 2022, as Appl. No. 17/936,607.
Claims priority of provisional application 63/250,298, filed on Sep. 30, 2021.
Prior Publication US 2023/0098114 A1, Mar. 30, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02118 (2013.01); H01L 21/02205 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method for selectively depositing a layer of organic material on a substrate comprising a first surface and a second surface by a cyclic deposition process, the process comprising:
providing a substrate in a reaction chamber;
providing a first vapor-phase precursor in the reaction chamber; and
providing a second vapor-phase precursor in the reaction chamber,
wherein the first and second vapor-phase precursors form organic material selectively on the first surface relative to the second surface; and wherein the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms, and wherein the first precursor is liquid at a temperature of 15-40° C.