US 12,476,084 B2
Plasma processing apparatus, high-frequency power supply circuit, and impedance matching method
Masaharu Shiratani, Fukuoka (JP); Kunihiro Kamataki, Fukuoka (JP); Kazunori Koga, Fukuoka (JP); Takahiro Shindo, Nirasaki (JP); and Tatsuo Matsudo, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP); and Kyushu University, National University Corporation, Fukuoka (JP)
Appl. No. 18/274,808
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP); and KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, Fukuoka (JP)
PCT Filed Jan. 19, 2022, PCT No. PCT/JP2022/001781
§ 371(c)(1), (2) Date Jul. 28, 2023,
PCT Pub. No. WO2022/163461, PCT Pub. Date Aug. 4, 2022.
Claims priority of application No. 2021-012038 (JP), filed on Jan. 28, 2021.
Prior Publication US 2024/0120179 A1, Apr. 11, 2024
Int. Cl. H01J 37/32 (2006.01); H03H 11/44 (2006.01)
CPC H01J 37/32183 (2013.01) [H03H 11/44 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing apparatus for performing plasma processing on a substrate, comprising:
a processing container accommodating the substrate;
an electrode to which a high-frequency power for generating plasma in the processing container is applied;
a high-frequency power supply configured to apply the high-frequency power to the electrode; and
a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode,
wherein the high-frequency power supply circuit comprises:
a power supply path configured to supply a power from the high-frequency power supply to the electrode; and
a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.
 
19. An impedance matching method performed when plasma is generated by supplying a high-frequency power, comprising:
supplying a high-frequency power for plasma generation from a high-frequency power supply to an electrode through a power supply path; and
matching a high-frequency power supply-side plasma with a plasma-side impedance using a matching device comprising a negative impedance portion connected to the power supply path and configured to realize a negative impedance corresponding to the plasma-side impedance.