| CPC H01J 37/321 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32798 (2013.01); H01J 2237/3323 (2013.01)] | 20 Claims |

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1. An apparatus for processing a substrate, the apparatus comprising:
a chamber having a processing space;
a support unit for supporting a substrate in the processing space;
a gas supply unit for supplying process gas to the processing space; and
a plasma generation unit for generating plasma from the process gas,
wherein the plasma generation unit includes:
an inner coil part including a plurality of inner coils;
an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils;
an upper power source for applying power to the inner coil part and the outer coil part, and
each of the inner coils and each of the outer coils are provided to be concentric with each other,
each of the inner coils and the outer coils has:
a first portion to an nth portion, and
a first connection portion to an n−1th connection portion, and Nis a natural number equal to or greater than 2,
the first portion to the nth portion are each provided in a shape of an arc having a different radius with respect to the concentric point,
the k+1th portion has a radius greater than the kth portion, the kth connection portion connects the kth portion to the k+1th portion, and the k is a natural number equal to or greater than 1 and equal to or less than n−1,
any one of the first portion and the nth portion has a power terminal to which an electricity line receiving power from the power source is connected,
the other of the first portion and the nth portion has a ground terminal connected with a ground line, and
in each of the inner coils and the outer coils, the power terminal and the ground terminal are located on a straight line through the concentric point.
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