US 12,475,959 B2
Non-volatile memory with current detection circuit
Abu Naser Zainuddin, Milpitas, CA (US); Jiahui Yuan, Fremont, CA (US); and Sai Gautham Thoppa, San Jose, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Sandisk Technologies, Inc., Milpitas, CA (US)
Filed on Oct. 5, 2023, as Appl. No. 18/481,786.
Prior Publication US 2025/0118379 A1, Apr. 10, 2025
Int. Cl. G11C 16/34 (2006.01); G05F 1/46 (2006.01); G11C 5/14 (2006.01); G11C 7/04 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); G11C 11/4074 (2006.01); G11C 13/00 (2006.01); G11C 16/04 (2006.01); G11C 16/28 (2006.01)
CPC G11C 16/3459 (2013.01) [G05F 1/462 (2013.01); G11C 5/147 (2013.01); G11C 7/04 (2013.01); G11C 11/1697 (2013.01); G11C 11/2297 (2013.01); G11C 11/4074 (2013.01); G11C 13/0038 (2013.01); G11C 16/0433 (2013.01); G11C 16/28 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a power input;
a current detection circuit connected to the power input, the current detection circuit is configured to compare current at the power input to a reference and indicate whether current at the power input is greater than the reference;
a non-volatile memory structure; and
a control circuit connected to the non-volatile memory structure, the power input and the current detection circuit;
the control circuit is configured to adjust a parameter used during a memory operation in response to the current detection circuit indicating that current at the power input is greater than the reference and perform the memory operation using the adjusted parameter.