US 12,475,037 B2
Voltage-triggered performance throttling
Hui Wang, Shanghai (CN); Minjian Wu, Zhejiang (CN); and Hongyan Li, Shanghai (CN)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 14, 2024, as Appl. No. 18/441,996.
Claims priority of provisional application 63/487,675, filed on Mar. 1, 2023.
Prior Publication US 2024/0296117 A1, Sep. 5, 2024
Int. Cl. G06F 12/02 (2006.01)
CPC G06F 12/0246 (2013.01) 18 Claims
OG exemplary drawing
 
1. A method comprising:
monitoring an input voltage to a memory subsystem to determine a first input voltage value, the memory subsystem operating at a first performance level of a plurality of performance levels, wherein the input voltage is supplied by a host device and wherein the first performance level includes a first number of available parallel commands for the memory subsystem;
detecting that the first input voltage value satisfies a threshold voltage value;
in response to detecting that the first input voltage value satisfies a threshold voltage value, selecting a second performance level of the plurality of performance levels that throttles the performance of the memory device, wherein the second performance level includes a second number of available parallel commands for the memory subsystem and wherein the second number is less than the first number;
monitoring the input voltage to the memory subsystem to determine a second input voltage value in response to determining a number of operations performed satisfies a threshold number of operations, the memory subsystem operating at the second performance level; and
selecting between the second performance level and a third performance level of the plurality of performance levels using the second input voltage value, wherein the third performance level includes a third number of available parallel commands for the memory subsystem.