| CPC G04D 3/0069 (2013.01) [G04D 3/0074 (2013.01)] | 7 Claims |
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1. A method for manufacturing a silicon timepiece component, comprising the following steps of:
a) procuring an silicon-on-insulator (SOI) wafer successively comprising a silicon device layer, a silicon oxide bonding layer, and a silicon handle layer;
b) growing a silicon oxide layer on a front face and a rear face of the SOI wafer;
c) etching the silicon oxide layer on the front face, then the silicon device layer by deep reactive ion etching (DRIE), to form the silicon timepiece component, as well as an internal anchor element and a bridge of material connecting said anchor element to an inner wall of the timepiece component in a non-critical area of the inner wall;
d) etching the silicon oxide layer on the rear face, then the silicon handle layer by DRIE, to form at least one narrow bridge and at least one rear anchor integral with the at least one narrow bridge, the rear anchor being connected to the anchor element of the device layer by the silicon oxide bonding layer bonding the silicon device and silicon handle layers; and
e) releasing the silicon timepiece component by wet etching, the silicon timepiece component being held on the SOI wafer by the anchor element via the bridge of material, the silicon oxide bonding layer remaining present only where both the silicon device layer and the silicon handle layer have not been etched away by the wet etching, and the whole resting on the at least one rear anchor connected to the at least one narrow bridge, which is connected to the silicon handle layer so as to make all faces of the silicon timepiece component accessible,
wherein the inner wall of the silicon timepiece component is the wall of a hole arranged to receive a shaft or the wall of an opening internal to the silicon timepiece component.
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